Simulation of the Electrical Characteristics of Double Gate FinFET with the Variation of Channel Length

Abstract

In this research work, electrical characteristics of double gate FinFET have been simulated by varying the length of the channel region. 40 nm, 50nm and 60nm channel length has been considered to simulate the drain current VS front gate voltage characteristics for FinFET. For these three different values of channel length, electric field profile along the FinFET channel has also been studied in this research. Finally the electrostatic potential along the channel has been simulated for varying the channel length of the FinFET. After analyzing the simulations, it has been proposed that higher drain current, wide variation of electric field along the channel region as well as increased carrier mobility and lower electrostatic potential along the channel can be achieved for smaller value of the channel length of FinFET. The whole simulation works have been performed by Nano HUB online simulation tool named “DG-MOSFET” where the data of the simulation were processed and the plots were generated.